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电沉积Mo和Mo-Co合金纳米线用于互联电阻的电阻率改性 Article
Jun Hwan Moon, Taesoon Kim, Youngmin Lee, Seunghyun Kim, Yanghee Kim, Jae-Pyoung Ahn, Jungwoo Choi, Hyuck Mo Lee, Young Keun Kim
《工程（英文）》 2024年 第32卷 第1期 页码 128-138 doi: 10.1016/j.eng.2023.07.017
Achieving historically anticipated improvement in the performance of integrated circuits is challenging, due to the increasing cost and complexity of the required technologies with each new generation. To overcome this limitation, the exploration and development of novel interconnect materials and processes are highly desirable in the microelectronics field. Molybdenum (Mo) is attracting attention as an advanced interconnect material due to its small resistivity size effect and high cohesive energy; however, effective processing methods for such materials have not been widely investigated. Here, we investigate the electrochemical behavior of ions in the confined nanopores that affect the electrical properties and microstructures of nanoscale Mo and Mo–Co alloys prepared via template-assisted electrodeposition. Additives in an electrolyte allow the deposition of extremely pure metal materials, due to their interaction with metal ions and nanopores. In this study, boric acid and tetrabutylammonium bisulfate (TBA) were added to an acetate bath to inhibit the hydrogen evolution reaction. TBA accelerated the reduction of Mo at the surface by inducing surface conduction on the nanopores. Metallic Mo nanowires with a 130 nm diameter synthesized through high-aspect-ratio nanopore engineering exhibited a resistivity of (63.0 ± 17.9) μΩ·cm. We also evaluated the resistivities of Mo–Co alloy nanowires at various compositions toward replacing irreducible conventional barrier/liner layers. An intermetallic compound formed at an Mo composition of 28.6 at%, the resistivity of the Mo–Co nanowire was (58.0 ± 10.6) μΩ·cm, indicating its superior electrical and adhesive properties in comparison with those of conventional barriers such as TaN and TiN. Furthermore, density functional theory and non-equilibrium Green’s function calculations confirmed that the vertical resistance of the via structure constructed from Mo-based materials was 21% lower than that of a conventional Cu/Ta/TaN structure.
关键词： Molybdenum Molybdenum–cobalt Interconnect Microstructure Electrodeposition Density functional theory
同质集成可见光互联芯片 Article
Wei CAI, Bing-cheng ZHU, Xu-min GAO, Yong-chao YANG, Jia-lei YUAN, Gui-xia ZHU, Yong-jin WANG, Peter GRÜNBERG
《信息与电子工程前沿（英文）》 2017年 第18卷 第9期 页码 1288-1294 doi: 10.1631/FITEE.1601720
标题 作者 时间 类型 操作
电沉积Mo和Mo-Co合金纳米线用于互联电阻的电阻率改性
Jun Hwan Moon, Taesoon Kim, Youngmin Lee, Seunghyun Kim, Yanghee Kim, Jae-Pyoung Ahn, Jungwoo Choi, Hyuck Mo Lee, Young Keun Kim
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